Advantages of GaN Charging Technology

Gallium nitride is an inorganic substance with the chemical formula GaN, a compound of nitrogen and gallium, and a direct bandgap semiconductor. The structure of this compound is similar to wurtzite with high hardness. Gallium nitride has a wide energy gap of 3.4 electron volts, which can be used in high-power, high-speed optoelectronic components.

Traditional charging heads use semiconductor brick technology. The charging heads designed with this technology are relatively large and generate a relatively large amount of heat. Gallium oxide is a third-generation semiconductor black technology material that is widely used in the aerospace and military fields. The characteristics of high discharge rate and high reliability, used to design and manufacture charging heads, will achieve higher reliability under the condition of reducing heat generation and reducing volume.

My MacBook Pro.EOS R6.EOS RP.iPhone 11 Pro MaxDJPocket2.Huawei Mate 40 Prc and many other devices can be recharged with gallium oxide super power. Greatly simplifies the carrying of charging equipment when going out